The 50mw Green Laser Pointer Diode Can Be Analog

One of the characteristics of the laser diode is directly modulated the light output from the current strength. Because the output optical power and the input current is a linear relationship between the more so the 50mW green laser pointer diode can be analog or digital outputs direct current modulation of light intensity, eliminating the need for expensive modulator, so that diode applications more affordable. FP (Fabry - Perot) cavity LD has become a regular product, low to the high reliability of direction. The lasing wavelength of DFB-LD mainly by the tiny device's internal preparation of the decision reflects the grating period, dependent on the active layer spacing along the entire distribution of the folds of corrugated reflection grating-like structure to work. DFB-LD on both sides of different materials or different components of the semiconductor crystal layer, usually made in quantum well QW active layer near the waveguide region. This wave-like structure so that the refractive index waveguide region was periodically distributed, and its role as a resonance control, is the grating wavelength selective institutions. The use of QW material size effect and the role of DFB grating selection mode, the lasing spectrum of light out of a wide, high-speed modulation in a single longitudinal mode output dynamically. Built-in modulator optical transmitter DFB-LD to meet small, low power requirements. DFB-LD and ? III family of multi-use elements of the ternary compounds, quaternary compounds, in the 1550nm band, the most mature material is InGaAsP / InP. New AIGaInAs / InP materials research and development matures, only a few international vendors to provide commercial products. Optimize the device structure, the active area for the strain superlattice QW. Around the active region is generally Shuang'gou or ridge waveguide structure buried. The technology absorption of  200mW green Laser Pointer is not easy to be finished.
Area near the active region optical waveguide grating for the DFB, the use of special design, such as: the distribution of corrugated slope adjustable coupling, re-coupling, absorption coupled, gain-coupled, composite structure of discontinuous phase shift, to improve device performance. Production technology, the metal organic chemical vapor deposition MOCVD and etched grating is the key process. MOCVD epitaxial layer can be precisely control the composition, doping concentration, thin to a few atomic layer thickness, growth, high efficiency, suitable for mass production, reactive ion beam etching to ensure the uniformity of the grating geometry, electron beam phase mask etching step array grating can be produced. 1550nmDFB-LD in large quantities for 622Mb / s, 2.5Gb / s optical transmission system equipment, the choice of wavelength DFB-LD in the large-capacity, long-distance optical fiber communications as a major source. Integrated on the same chip with multi-wavelength DFB-LD external cavity electro-absorption modulator is also developing single-chip light source. Successful development of the electro-absorption modulator integrated light source, using the active layer and the modulator absorption layer share more QW structures. Modulator acts as a high-speed switch, the LD output converted into binary 0 and 1. On a single chip to form 40 different refraction grating, wavelength 1530 - 1590nm, 40 road modulator integrated light source, channel spacing is 200GHz. The development objective is to integrate the emission wavelength of 100 LD array for 9.5THz large-capacity communication. The company of  100mW green laser pointer pays a lot attention to the technology absorption of  green laser pointer .